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Specular Scattering in Electrical Transport in the Thin Tilm System CoSi2/Si

Published online by Cambridge University Press:  26 February 2011

J. C. Hensel ,
R. T. Tung ,
J. M. Poate  and
F. C. Unterwald
J. C. Hensel
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
R. T. Tung
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. M. Poate
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
F. C. Unterwald
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

We have investigated electrical transport in thin films of CoSi2 at low temperatures as a function of film thickness and observe in conductivity a size effect much smaller than seen heretofore indicative of a high degree of specularity in the boundary scattering. This in large part owes to the unique characteristics of these films, i.e., they are single crystal and continuous down to ∼60Å thickness with long bulk scattering lengths (≈1000Å) in transport at liquid He temperatures and have nearly atomically perfect interfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 355
Copyright
Copyright © Materials Research Society 1985

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References

1. Thomson, J. J., Proc. Camb. Phil. Soc. 11, 120 (1901).Google Scholar
2. See critical review by Sambles, J. R., Thin Solid Films 106, 321 (1983).Google Scholar
3. Tung, R. T., Gibson, J. M., and Poate, J. M., Phys. Rev. Letters 50, 429 (1983) and References therein.Google Scholar
4. Hensel, J. C., Tung, R. T., Poate, J. M., and Unterwald, F. C., Appl. Phys. Lett. 44, 913 (1984).CrossRefGoogle Scholar
5. The fact that the bands near the Fermi energy are free-electron-like (s and p character) affords some hope that such a simple analysis might work. See, e.g., Tersoff, J. and Hamann, D. R., Phys. Rev. B 28, 1168 (1983).Google Scholar
6. Fuchs, K., Proc. Camb. Phil. Soc. 34, 100 (1938); also see E. H. Sondheimer, Adv. Phys. 1, 1 (1952)Google Scholar