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Spectroscopy of Impurities and Complex Defects in Silicon in Zlectric and Microwave Fields

Published online by Cambridge University Press:  26 February 2011

M. Godlewski ,
H. Weman ,
F. P. Wang ,
B. Monemar ,
W. M. Chen  and
Q. X. Zhao
M. Godlewski
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
H. Weman
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
F. P. Wang
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
B. Monemar
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
W. M. Chen
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
Q. X. Zhao
Affiliation:
Department of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
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Abstract

We report a detailed study of the photoluminescence (PL) intensity of bound excitons (BE:s) in silicon, related to shallow impurities and deep complex defects, as a function of DC and high frequency AC (9GHz) electric fields. Two experimental approaches are presented. The first involves a simultaneous recording of PL and photocurrent under pulsed DC excitation. The second utilizes the optically detected cyclotron resonance (ODCR) technique, which allows detection of cyclotron resonance (CR) via the resonancetransition- induced changes of BE PL intensity. The mechanism responsible for the PL changes is shown to be the impact ionization of BE:s by hot free carriers. Effects of sample inhomogeneities in these experiments are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 117
Copyright
Copyright © Materials Research Society 1988

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Footnotes

*

Permanent address: Institute of Physics, Polish Academy of Sciences, 02-668 Warsaw, Al.Lotnikow 32/46, Poland

References

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