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Spectroscopic Study of Titanium Oxide Thin Films at Low Temperatures by X-ray Diffraction, Raman Scattering, Fourier Transform Infrared Spectroscopy and Photoluminescence

Published online by Cambridge University Press:  01 February 2011

Zhiwei Zhao  and
Beng Kang Tay
Zhiwei Zhao
Affiliation:
[email protected], Nanyang Technological University, School of Electrical and Electronic Engineering, Nanoelectronics I, S1-B3a-01,EEE, Nanyang Technological University,, Singapore, Singapore, 639798, Singapore, 65-67906127, 65-67933318
Beng Kang Tay
Affiliation:
[email protected], Nanyang Technological University, School of Electrical and Electronic Engineering, Singapore, Singapore, 639798, Singapore
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Abstract

Titanium oxide thin films were prepared by filtered cathodic vacuum arc (FCVA) at low temperatures ranged from room temperature to 330°C. Spectroscopic study of the deposited films were carried out by X-ray diffraction, Raman Scattering, Fourier transform infrared spectroscopy (FTIR) and photoluminescence (PL), respectively. The films remained amorphous up to the substrate temperature of 230°C. Nanocrystalline titanium oxide thin films occurred at 330°C with the strongest peak intensity from anatase (101) plane. The average grain size was around 20 nm and no rutile phase could be found. Various allowed vibrational frequencies (e.g. 152, 199, 399, 640 cm−1) in Raman spectra and Ti-O-Ti transverse mode at 436 cm−1 in the FTIR spectrum evidently verified the presence of anatase phase in the films at 330°C. Moreover, at room temperature only crystalline film exhibited a PL peak with the center at 379 nm in PL spectrum and the origin was discussed.

Keywords

filmx-ray diffraction (XRD)Raman spectroscopy
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 928: Symposium GG – Current and Future Trends of Functional Oxide Films , 2006 , 0928-GG13-03
Copyright
Copyright © Materials Research Society 2006

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