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Spectroscopic Properties of Cubic SiC on Si

Published online by Cambridge University Press:  11 February 2011

Z. C. Feng ,
D. N. Talwar  and
I. Ferguson
Z. C. Feng
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332–0250, USA
D. N. Talwar
Affiliation:
Department of Physics, Indiana University of Pennsylvania, Indiana, PA 15705–1087, USA
I. Ferguson
Affiliation:
School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332–0250, USA
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Abstract

Spectroscopic studies are reported for cubic SiC grown on Si by chemical vapour deposition (CVD) manufacture technique. The UV excitation room temperature photoluminescence (PL)-Raman spectra exhibited 2.3 eV luminescence line due to RT recombination over the SiC indirect band gap. In addition to the optical phonons from cubic SiC we observed new Raman modes near 620 and 833 cm-1. A comprehensive analysis of the dynamical properties of defects using Green's function theory has suggested isolated impurity vibrations to be the possible origin for the additional phonons observed by Raman spectroscopy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 742: Symposium K – Silicon Carbide-Materials, Processing, and Devices , 2002 , K2.14
Copyright
Copyright © Materials Research Society 2003

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