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Spectroscopic Ellipsometry Studies of Giaever Immunology Slide

Published online by Cambridge University Press:  22 February 2011

B. Yang ,
S. Y. Kim  and
K. Vedam
B. Yang
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
S. Y. Kim
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
K. Vedam
Affiliation:
Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802
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Abstract

Spectroscopic ellipsometry has been used to study the dielectric response of indium film evaporated on a glass substrate, as well as that of indium film adsorbed with monolayers of Bovine Serum Albumin (BSA) and Rabbit Antiserum on BSA (RABSA). It is found that the position of the ε2 peak (or the peak of the imaginary part of the complex dielectric function) shifts to longer wavelengths and also increases in height as monolayers of BSA and RABSA are successively adsorbed onto it. The observed peak changes are due to the adsorption of BSA and RABSA on the surface of prolate indium clusters, which in effect increases the effective refractive index of voids between indium islands from 1.0 to 1.075 (BSA) and 1.15 (BSA + RABSA).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 55: Symposium G – Biomedical Materials , 1985 , 327
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1. Giaever, Ivar, J. Immunology 110, 1424 (1973).Google Scholar
2. Treu, J.I., Appl. Opt. 15, 2746 (1976).Google Scholar
3. Aspnes, D.E. and Studna, A.A., Appl. Opt. 14, 220 (1975).CrossRefGoogle Scholar
4. BSA obtained from Sigma Chemical Co., St. Louis, MO.Google Scholar
5. Theye, M.L. and Devant, G., Thin Solid Films 4, 205 (1969).Google Scholar
6. Koyamao, R.Y. Phys. Rev. 8B, 2426 (1973).CrossRefGoogle Scholar
7. Aspnes, D.E., in Optical Characterization Techniques for Semiconductor Techolgy, edited by Aspnes, D.E., So, S.S. and Potter, R.F., Proc. SPIE, 276, 188 (1981).CrossRefGoogle Scholar
8. Aspnes, D.E., Theeten, J.B. and Hottier, F., Phys. Rev. 20B, 3292 (1979).Google Scholar
9. Aspnes, D.E., J. Vac. Sci. Techol. 18, 289 (1981).CrossRefGoogle Scholar
10. Hetriok, R.E. and Lambe, J., Phys. Rev. 11B, 1273 (1975).Google Scholar
11. Rasigni, G., Petrakian, J.P., Rasigni, M. and Palmari, J.P., J. Phys. C., Solid State Phys. 9, L325 (1976).Google Scholar
12. Garnett, J.C. Maxwell, Phil. Trans. Roy. Soc. Lond. 203A, 385 (1904); 205A, 237 (1906).Google Scholar
13. Bruggeman, D.A.G., Ann. Phys. (Leipz) 24, 636 (1935).Google Scholar
14. Polder, D. and Santen, J.H. van, Physica 12, 257 (1946).Google Scholar
15. Cohen, L.W., Cody, G.D., Coutts, M.D. and Abeles, B., Phys. Rev. 8B, 3689 (1973).CrossRefGoogle Scholar
16. Granqvist, C.G. and Hunderi, O., Phys. Rev. 16B, 3513 (1977); 18B, 2897 (1978); Appl. Opt. 20, 26 (1981).Google Scholar
17. Mueller, H.K., Phys. Stat. Solidi, 27, 723 (1968).Google Scholar