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Spectroscopic Ellipsometry as a Potential In-Line Optical Metrology Tool For Relative Porosity Measurements of Low- K Dielectric Films

Published online by Cambridge University Press:  17 March 2011

N.V. Edwards
Affiliation:
Motorola Process and Materials Characterization Laboratory, Mesa AZ 85202;
J. Vella
Affiliation:
Motorola Process and Materials Characterization Laboratory, Mesa AZ 85202;
Q. Xie
Affiliation:
Motorola Process and Materials Characterization Laboratory, Mesa AZ 85202;
S. Zollner
Affiliation:
Motorola Process and Materials Characterization Laboratory, Mesa AZ 85202;
D. Werho
Affiliation:
Motorola Process and Materials Characterization Laboratory, Mesa AZ 85202;
I. Adhihetty
Affiliation:
Motorola Process and Materials Characterization Laboratory, Mesa AZ 85202;
R. Liu
Affiliation:
Motorola Process and Materials Characterization Laboratory, Mesa AZ 85202;
T.E. Tiwald
Affiliation:
J.A. Woollam Co., Inc., Lincoln, NE 68508;
C. Russell
Affiliation:
Bede Scientific Inc., Englewood, CO 80112;
J. Vires
Affiliation:
Motorola Advanced Products Research and Development Laboratory, Austin, TX 78721
K.H. Junker
Affiliation:
Motorola Advanced Products Research and Development Laboratory, Austin, TX 78721
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Abstract

The optical properties of organosilicate glass (OSG) samples were investigated with spectroscopic ellipsometry. We found that samples with dramatically higher hardness had higher indices of refraction (RI) and thus higher electron densities and lower relative porosities than films with lower hardnesses. The reverse was true for films with low hardnesses. As well, these films did not have the same optical properties as porous SiO2 across the spectral range measured, which we show has significant implications for the in-line optical metrology of these materials.

Type
Research Article
Copyright
Copyright © Materials Research Society 2002

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