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Spectroscopic Ellipsometric Characterization of Low Temperature GaAs

Published online by Cambridge University Press:  26 February 2011

X. Gao ,
P. G. Snyder ,
P. W. Yu ,
Y. Q. Zhang  and
Z. F. Peng
X. Gao
Affiliation:
Center for Microelectronic and Optical Materials Research, and Dept. of Electrical Engineering, Univ. of Nebraska-Lincoln, Lincoln, NE 68588–0511
P. G. Snyder
Affiliation:
Center for Microelectronic and Optical Materials Research, and Dept. of Electrical Engineering, Univ. of Nebraska-Lincoln, Lincoln, NE 68588–0511
P. W. Yu
Affiliation:
WL/MLPO Bldg. 651, Wright Patterson AFB, OH 45433–7707
Y. Q. Zhang
Affiliation:
Nanjing Electronic Devices Institute, Nanjing, 210016, P. R. China
Z. F. Peng
Affiliation:
Nanjing Electronic Devices Institute, Nanjing, 210016, P. R. China
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Abstract

Pseudodielectric functions of low temperature grown GaAs (LT GaAs) measured by spectroscopic ellipsometry are presented. The spectral range includes the El (2.92eV) and El+ΔAl (3.13eV) critical point structure of GaAs. A Lorentz-oscillator model was used to fit the dielectric function of LT GaAs for samples with nominal growth temperatures (Tg) varying from 200°C to 580°C. For Tg of 200°C, 30% and 19% broadenings and −0.01 leV and −0.007eV red shifts were found for the El and El+Δl structures respectively, compared with normal GaAs. The red shift can be explained in terms of a strain effect in the LT layer. In annealed LT GaAs the broadening decreased significantly and no red shift was found.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 378: Symposium B – Defect and Impurity-Engineered Semiconductors and Devices , 1995 , 213
Copyright
Copyright © Materials Research Society 1995

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