Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-25T15:17:54.926Z Has data issue: false hasContentIssue false
  • English
  • Français

Spectroscopic and Structural Studies of Some Precursors for the Deposition of PZT and Related Materials by MOCVD

Published online by Cambridge University Press:  10 February 2011

Kirsty A. Fleeting ,
Tony C. Jones ,
Tim Leedham ,
M. Azad Malik ,
Paul O'brien  and
David J. Otway
Kirsty A. Fleeting
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK.
Tony C. Jones
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK.
Tim Leedham
Affiliation:
Inorgtech Ltd, 25 James Carter Rd, Mildenhall, Suffolk, IP28 7DE, UK.
M. Azad Malik
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK.
Paul O'brien
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK.
David J. Otway
Affiliation:
Department of Chemistry, Imperial College of Science, Technology and Medicine, Exhibition Road, London, SW7 2AZ, UK.
Get access

Abstract

MOCVD is a useful method for the deposition of thin films of lead zirconium titanate, PZT, because of its good step coverage and control of composition. Results are herein presented on a number of novel compounds which are potential MOCVD precursors. The compounds studied include Pb(tmhd)2, Zr(OBu')4 and Ti(OPr')4. Another commonly utilized precursor Zr(tmhd)4, is not ideal, in that it is a high melting point solid, and hence requires high substrate temperatures. We have sought to modify Zr precursors through chemical methods and have synthesized a number of novel, more volatile, and less intrinsically thermally stable MOCVD precursors. Full chemical characterization of the Zr precursors (NMR, IR, MS, CHN, TGA/DSC, Single Crystal X-ray diffraction) has been undertaken. We also present structural results on some related lead precursors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 57
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Sotome, Y., Senzaki, J., Morita, S.-I., Tanimoto, S., Hirai, T., Ueno, T., Kuroiwa, K. and Tarui, Y., Jpn. J. Appl. Phys., 33, p.4066 (1994).Google Scholar
2. Lee, S.-S. and Kim, H.-G., J. Elect. Mat, 24, p. 1023 (1995).Google Scholar
3. Hase, T., Sakuma, T., Miyasaka, Y., Hirata, K. and Hosokawa, N., Jpn. J. Appl. Phys., 32, p. 4061 (1993).Google Scholar
4. Foster, C. M., Bai, G-R., Csencsits, R., Vetrame, J., Jammy, R., Wells, L. A., Carr, E., and Amano, J., J. Appl. Phys., 81, p. 2349 (1997).Google Scholar
5. Shiosaki, T., Fujimoto, M., Shimizu, M., Fkagawa, M. and Nakaya, K., Int. Ferroelect., 5, p. 39 (1994).Google Scholar
6. Kim, D., Kim, T.-Y., Lee, J. K., Tao, W. and Desu, S. B., Mat. Res. Soc. Symp. Proc., 433, p. 213 (1996).Google Scholar
7. Shimizu, M., Hyodo, S., Fujisawa, H., Niu, H. and Shiosaki, T., Mat. Res. Soc. Symp. Proc., 433, p. 201 (1996).Google Scholar
8. Hirai, T., Teramoto, K., Goto, T. and Tarai, Y., Jpn. J. Appl. Phys., 34, p. 539 (1995).Google Scholar
9. Scott, J. F. and Paz de Araujo, C. A., Science, 246, P.1400 (1989).Google Scholar
10. Moazzami, R., Manier, P. D., Jones, R. E. Jr, Campbell, A. C. and Mogato, C. J., VLSI Technology Symposium Digest, p. 87 (1993).Google Scholar
11. Larsen, P. K., Cuppens, R. and Spierings, G. A. C. M., Ferroelect, 128, p.265 (1992).Google Scholar
12. Taylor, D. J., Larsen, P. K., Dormane, G. J. M. and De Veirman, A. E. M., Int. Ferroelect, 7, p. 123 (1995).Google Scholar
13. Lee, S.-S. and Kim, H.-G., J. Elect. Mat., 24, p. 1023 (1995).Google Scholar
14. Lee, J.-J. and Dey, S. K., Ceram. Trans. (Ferroelectric Thin Films), 25, p. 235 (1992).Google Scholar
15. Tao, W., Desu, S. B., and Li, T. K., Mat. Lett., 23, p. 177 (1995).Google Scholar
16. Jones, A. C., Leedham, T. J., Wright, P., Crosbie, M. J., Lane, P. A., and Williams, D., these proceedings.Google Scholar
17. Jones, A. C., Leedham, T. J., Wright, P. J., Crosbie, M. J., Lane, P. A., Williams, D., Fleeting, K. A., Otway, D. J. and O'Brien, P., Adv. Mater., Chem. Vap. Dep., accepted for publication (1997).Google Scholar
18. Malik, M. A., Motevalli, M. and O'Brien, P., J. Chem. Soc, Chem. Commua, p. 1257 (1992).Google Scholar