Hostname: page-component-78c5997874-dh8gc Total loading time: 0 Render date: 2024-11-06T02:12:05.098Z Has data issue: false hasContentIssue false
  • English
  • Français

Spectroellipsometry Studies of Znl-x.cdxSe: From Optical Functions to Heterostructure Characterization

Published online by Cambridge University Press:  15 February 2011

Joungchel Lee ,
Byungyou Hong ,
J. S. Burnham ,
R. W. Collins ,
F. Flack  and
N. Samarth
Joungchel Lee
Affiliation:
Also affiliated with the Materials Research Laboratory
Byungyou Hong
Affiliation:
Also affiliated with the Materials Research Laboratory
J. S. Burnham
Affiliation:
Also affiliated with the Materials Research Laboratory
R. W. Collins
Affiliation:
Also affiliated with the Materials Research Laboratory
F. Flack
Affiliation:
Department of Physics, The Pennsylvania State University, University Park PA 16802.
N. Samarth
Affiliation:
Department of Physics, The Pennsylvania State University, University Park PA 16802.
Get access

Abstract

The dielectric functions of 0.5–1.5 μm Znl-xCdxSe (0≤x≤0.34) epilayers on GaAs have been determined over the photon energy range 1.5≤E≤5.3 eV. These spectra have been parameterized using the Sellmeier approximation for energies less than the fundamental gap at E0 and using a sum of Lorentz oscillators above the gap region. As an example of the usefulness of the approach, expressions are provided that yield the index of refraction of Znl-xCdxSe (0≤x≤ 0.34) for 1.5 eV≤E<E0- As a second example, we have determined the composition and thickness of a Znl-xCdxSe quantum well between ZnSe barrier layers.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 406: Symposium L – Diagnostic Techniques for Semiconductor Materials Processing , 1995 , 377
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] See for example, II-VI Semiconducting Compounds, edited by Thomas, D.G (W.A. Benjamin, New York, 1967).Google Scholar
[2] Samarth, N., Luo, H., Furdyna, J.K., Alonso, R.G., Lee, Y.R., Ramdas, A.K., Qadri, S.B., and Otsuka, N., Appl. Phys. Lett. 56, 1163 (1990).Google Scholar
[3] Erman, M., Theeten, J.B., Vodjdani, N., and Demay, Y., J. Vac. Sci. Technol. B 1, 328 (1983).Google Scholar
[4] Snyder, P.G., Rost, M.C., Bu-Abbud, G.H., Woollam, J.A., and Alterovitz, S.A., J. Appl. Phys. 60, 3293 (1986).Google Scholar
[5] Heyd, A.R., Collins, R.W., Vedam, K., Bose, S.S., and Miller, D.L., Appl. Phys. Lett. 60, 2776 (1992).Google Scholar
[6] Terry, F.L., J. Appl. Phys. 70, 409 (1991).Google Scholar
[7] Snyder, P.G., Woollam, J.A., Alterovitz, S., and Johs, B., J. Appl. Phys. 68, 5925 (1990).Google Scholar
[8] Adachi, S. and Taguchi, T., Phys. Rev. B 43, 9569 (1991). See references therein for earlier optical studies based on reflectance.Google Scholar
[9] Kim, Y.-D., Cooper, S.L., Klein, M.V., and Jonker, B.T., Appl. Phys. Lett. 62, 2387 (1993).Google Scholar
[10] Dahmani, R., Salamanca-Riba, L., Nguyen, N.V., Chandler-Horowitz, D., and Jonker, B.T., J. Appl. Phys. 76, 514 (1994).Google Scholar
[11] Kim, Y.-D., Klein, M.V., Ren, S.F., Chang, Y.C., Luo, H., Samarth, N., and Furdyna, J.K., Phys. Rev. B 49, 7262 (1994).Google Scholar
[12] Collins, R.W. and Vedam, K. in Encyclopedia of Applied Physics, Vol. 12 (VCH, New York, 1995) p. 285.Google Scholar