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Spectrally Resolved Cathodoluminescence Determination of Dopant Diffusion In InP/InGaAsP Based Multi Quantum Well Fabry-Perot Lasers

Published online by Cambridge University Press:  10 February 2011

C. Zanotti-Fregonara ,
C. Ferrari ,
L. Lazzarini ,
G. Salviati ,
M. Meliga ,
D. Bertone ,
R. Y. Fang ,
G. Morello  and
R. Paoletti
C. Zanotti-Fregonara
Affiliation:
CNR-MASEPC Institute, Parco Area delle Scienze, 37A, 43010 Parma, Italy
C. Ferrari
Affiliation:
CNR-MASEPC Institute, Parco Area delle Scienze, 37A, 43010 Parma, Italy
L. Lazzarini
Affiliation:
CNR-MASEPC Institute, Parco Area delle Scienze, 37A, 43010 Parma, Italy
G. Salviati
Affiliation:
CNR-MASEPC Institute, Parco Area delle Scienze, 37A, 43010 Parma, Italy
M. Meliga
Affiliation:
OTC-CSELT Laboratory, Via G Reiss Romoli 274, 10148 Torino, Italy
D. Bertone
Affiliation:
OTC-CSELT Laboratory, Via G Reiss Romoli 274, 10148 Torino, Italy
R. Y. Fang
Affiliation:
OTC-CSELT Laboratory, Via G Reiss Romoli 274, 10148 Torino, Italy
G. Morello
Affiliation:
OTC-CSELT Laboratory, Via G Reiss Romoli 274, 10148 Torino, Italy
R. Paoletti
Affiliation:
OTC-CSELT Laboratory, Via G Reiss Romoli 274, 10148 Torino, Italy
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Abstract

Low temperature monochromatic cathodoluminescence (CL) spectral analyses and imaging were used to determine the widths of resistive regions (due to Fe diffusion) in multi-quantum-well (MQW) InP-based laser devices and to detect the different amount of damage induced by alternative In-situ Etching (ISE) and Reactive Ion Etching (RIE) techniques. The widths of the resistive regions were estimated by comparing the 5 K CL emission width from the MQW and the actual width as obtained by SEM investigations. Monochromatic CL also did not reveal any emission from the InP:Sn layer between semi-insulating material (Fe-doped lnp) and p-type layer (Zn-doped InP), indicating interdiffusion of Fe and Zn laterally the MQW, and the presence of substantial Sn diffusion (up to 2500 nanometers) into the substrate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 93
Copyright
Copyright © Materials Research Society 2000

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References

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