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Spectral Utilization in Thermophotovoltaic Devices

Published online by Cambridge University Press:  10 February 2011

Marvin B. Clevenger ,
Christopher S. Murray  and
David R. Riley
Marvin B. Clevenger
Affiliation:
Westinghouse Electric Corporation, West Mifflin, PA 15122
Christopher S. Murray
Affiliation:
Westinghouse Electric Corporation, West Mifflin, PA 15122
David R. Riley
Affiliation:
Westinghouse Electric Corporation, West Mifflin, PA 15122
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Abstract

Multilayer assemblies of epitaxially-grown, Ill-V semiconductor materials are being investigated for use in thermophotovoltaic (TPV) energy conversion applications. It has been observed that thick, highly-doped semiconductor layers within cell architectures dominate the parasitic free-carrier absorption (FCA) of devices at wavelengths above the bandgap of the semiconductor material. In this work, the wavelength-dependent, free-carrier absorption of p- and n-type InGaAs layers grown epitaxially onto semi-insulating InP substrates has been measured and related to the total absorption of long-wavelength photons in thermophotovoltaic devices. The optical responses of the TPV cells are then used in the calculation of spectral utilization factors and device efficiencies.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 291
Copyright
Copyright © Materials Research Society 1998

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References

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