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Spectral Sensitivity and Color Selectivity in Multilayer Stacked Devices

Published online by Cambridge University Press:  01 February 2011

P. Louro ,
M. Vieira ,
A. Fantoni ,
M. Fernandes ,
G. Lavareda  and
C. Nunes de Carvalho
P. Louro
Affiliation:
Electronics Telecommunications and Computer Dept., ISEL, Lisbon, Portugal.
M. Vieira
Affiliation:
Electronics Telecommunications and Computer Dept., ISEL, Lisbon, Portugal.
A. Fantoni
Affiliation:
Electronics Telecommunications and Computer Dept., ISEL, Lisbon, Portugal.
M. Fernandes
Affiliation:
Electronics Telecommunications and Computer Dept., ISEL, Lisbon, Portugal.
G. Lavareda
Affiliation:
C1, IST, Av. Rovisco Pais, 1049-001 Lisboa, Portugal DCM, FCT-UNL, Quinta da Torre, 2829-516 Caparica, Portugal
C. Nunes de Carvalho
Affiliation:
C1, IST, Av. Rovisco Pais, 1049-001 Lisboa, Portugal DCM, FCT-UNL, Quinta da Torre, 2829-516 Caparica, Portugal
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Abstract

In this work, an attempt of full color discrimination is presented using as sensitive devices multilayer stacked structures (p(SiC:H)/i(SiC:H)/n(SiC:H)/p(SiC:H)/i(Si:H)/n(Si:H)) sandwiched between two transparent conductive contacts. The thickness and the absorption coefficient of the front p-i-n cell is optimized for blue collection and red transmittance and the thickness of the back one adjusted to achieve full absorption in the green and high collection in the red spectral ranges. The current-voltage characteristics and the spectral sensitivity under different electric and optical bias conditions and light fluxes are analyzed. Results show that color selectivity is achieved by tuning the spectral sensitivity at different applied voltages. A physical model supports the results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 862: Symposium A – Amorphous and Nanocrystalline Silicon Science and Technology–2005 , 2005 , A9.2
Copyright
Copyright © Materials Research Society 2005

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References

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