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Spatially Resolved Site Selective Optical Spectroscopy on Nd Doped GaN Epitaxial Layers

Published online by Cambridge University Press:  01 February 2011

Nate Woodward ,
Naveen Jha ,
Eric Readinger ,
Grace Metcalfe ,
Michael Wraback  and
Volkmar Dierolf
Nate Woodward
Affiliation:
[email protected], Lehigh University, United States
Naveen Jha
Affiliation:
[email protected], Lehigh University, United States
Eric Readinger
Affiliation:
[email protected], Army Research Lab, Adelphi, United States
Grace Metcalfe
Affiliation:
[email protected], Army Research Lab, Adelphi, United States
Michael Wraback
Affiliation:
[email protected], Army Research Lab, Adelphi, United States
Volkmar Dierolf
Affiliation:
[email protected], Lehigh University, United States
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Abstract

Due to its favorable electronic and thermal properties GaN has been considered as a rare-earth host material for solid state amplifier and laser applications. To this end, we performed spatially resolved combined excitation emission spectroscopy (CEES) on Nd ions which were in-situ-doped into GaN epitaxial films grown by plasma assisted molecular beam epitaxy (PA-MBE) on c-plane sapphire substrate. For a wide range of concentration (up to 8at%) we find in the emission a dominant incorporation site, which can be identified with good certainty as a substitutional ‘Ga’ site. Energy levels and electron-phonon coupling to a localized mode can be identified. For the majority site, confocal spectral imaging under selective excitation show changes in emission intensity, excitation and emission wavelength on a submicron length scale suggesting spatial inhomogeneities in terms of Nd3+ ion concentration.

Keywords

III-Voptical propertiesluminescence
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1111: Symposium D – Rare-Earth Doping of Advanced Materials for Photonic Applications , 2008 , 1111-D02-06
Copyright
Copyright © Materials Research Society 2009

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References

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