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Spatially Resolved Characterization of Plastic Deformation Induced by Focused-Ion Beam Processing in Structured InGaN/GaN Layers
Published online by Cambridge University Press: 01 February 2011
Abstract
In this study the results of polychromatic X-ray microbeam analysis (PXM) of the structural changes caused by FIB in nitride heterostructures are presented and discussed in connection with micro-photoluminescence (μ-PL), fluorescent analysis, scanning electron (SEM) and transmission electron microscopy (TEM) data. It is shown that FIB processing distorts the lattice in the InGaN/GaN layer not only in the immediate vicinity of the processed area but also in the surroundings. A narrow amorphidized top layer is formed in the direct ion beam impact area.
- Type
- Research Article
- Information
- MRS Online Proceedings Library (OPL) , Volume 1020: Symposium GG – Ion-Beam-Based Nanofabrication , 2007 , 1020-GG01-07
- Copyright
- Copyright © Materials Research Society 2007