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Spatially Resolved Characterization of Microstructure, Defects and Tilts in GaN Layers Grown on Si(111) Substrates by Maskless Cantilever Epitaxy

Published online by Cambridge University Press:  01 February 2011

Rozaliya Barabash ,
C. Roder ,
G. E. Ice ,
S. Einfeldt ,
J. D. Budai ,
W. Liu ,
O. M. Barabash ,
S. Figge  and
D. Hommel
Rozaliya Barabash
Affiliation:
[email protected], Oak Ridge National Laboratory, Materails Science and technology, One bethel Valley Road, Oak Ridge, TN, 37831-6118, United States
C. Roder
Affiliation:
[email protected], Institute of Solid State Physics, University of Bremen, Bremen, N/A, 28334, Germany
G. E. Ice
Affiliation:
[email protected], Oak Ridge National Laboratory, Materials Science and Technology Division, One Bethel Valley Road, Oak Ridge, TN, 37831-6118, United States
S. Einfeldt
Affiliation:
[email protected], Institute of Solid State Physics, University of Bremen, Bremen, N/A, 28334, Germany
J. D. Budai
Affiliation:
[email protected], Oak Ridge National Laboratory, Materials Science and Technology Division, One Bethel Valley Road, Oak Ridge, TN, 37831-6118, United States
W. Liu
Affiliation:
[email protected], Advanced Photon Source, Argonne, IL, 60439, United States
O. M. Barabash
Affiliation:
[email protected], Oak Ridge National Laboratory, Materials Science and Technology Division, One Bethel Valley Road, Oak Ridge, TN, 37831-6118, United States
S. Figge
Affiliation:
[email protected], Institute of Solid State Physics, University of Bremen, Bremen, N/A, 28334, Germany
D. Hommel
Affiliation:
[email protected], Institute of Solid State Physics, University of Bremen, Bremen, N/A, 28334, Germany
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Abstract

The spatially resolved distribution of strain, misfit and threading dislocations, and crystallographic orientation in uncoalesced GaN layers grown on Si(111) substrates by maskless cantilever epitaxy was studied by white-beam Laue x-ray microdiffraction, scanning electron microscopy, and orientation imaging microscopy. Tilt boundaries formed at the column/wing interface with the misorientation strongly depending on the growth conditions. A depth-dependent deviatoric strain gradient is found in the GaN. Types and density of misfit dislocations as well as their arrangement within different dislocation arrays was quantified. The results are discussed with respect to the miscut of the Si(111) surface and misfit dislocations formed at the interface.

Keywords

defectsx-ray diffraction (XRD)dislocations
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 934: Symposium I – Silicon-Based Microphotonics , 2006 , 0934-I09-06
Copyright
Copyright © Materials Research Society 2006

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