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Spatial Ordering of As Clusters Due to Indium Delta-Doping of LTMBE GaAs
Published online by Cambridge University Press: 10 February 2011
Abstract
We have shown that two-dimensional layers of arsenic nano-clusters separated by cluster-free GaAs matrix can be formed using indium delta-doping of GaAs films grown by molecular beam epitaxy at low (200°C) temperature. Spatially ordered structures of As clusters have been obtained in the epitaxial LT GaAs films doped with Si donors, Be acceptors and undoped as well.
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- Copyright © Materials Research Society 1996