Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-25T15:18:44.165Z Has data issue: false hasContentIssue false
  • English
  • Français

Spatial Concentrations of Silicon Atoms in RF Discharges of Silane

Published online by Cambridge University Press:  21 February 2011

R. M. Roth ,
K. G. Spears  and
G. Wong
R. M. Roth
Affiliation:
Currently at Standard Oil Company (Indiana), Amoco Research Center, P. O. Box 400, Naperville, Il 60566
K. G. Spears
Affiliation:
Northwestern University, Department of Chemistry, Evanston, IL 60201
G. Wong
Affiliation:
Northwestern University, Department of Physics and Astronomy, Evanston, IL 60201
Get access

Abstract

A capacitively coupled rf glow discharge of silane in argon was studied to determine the spatial concentration of silicon atoms. Laserinduced fluorescence was used to determine the ground state concentration profiles. The fluorescence profiles clearly show the sharp boundaries of the sheath regions. The dc bias voltage, silane mole fractions, flow rates, and chamber pressure were all varied to establish the sensitivity of the silane profiles. The existing theory of sheath formation is used to qualitatively understand the existence of sharp spatial boundaries and the sensitivity of the anode sheath region to plasma chemistry.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 38: Symposium F – Plasma Synthesis and Etching of Electronic Materials , 1984 , 117
Copyright
Copyright © Materials Research Society 1985

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. See review of Knights, J. C. and Lucovsky, G., CRC Crit. Rev. Solid State Mater. Sci. 9, 211 (1980).Google Scholar
2. Roth, R. M., Spears, K. G., and Wong, G., Appl. Phys. Lett. 45, 28 (1984).CrossRefGoogle Scholar
3. Roth, R. M., Spears, K. G., Stein, G. D., and Wong, G., submitted to Appl. Phys. Lett.Google Scholar
4. Spears, K. G. and Roth, R. M., Proceedings of a Symposium on Plasma Synthesis and Etching of Electronic Materials, Material Research Society, Boston, Nov. 1984.Google Scholar
5. Parmenter, C. S., Adv. Chem. Phys. 22, 365 (1972).Google Scholar
6. Pennebaker, W. B., IBM J. Res. Develop. 23, 16 (1979).Google Scholar