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Space-Time Resolved Reflectivity Measurements of Picosecond Laser Induced Phase Transitions in <111> Silicon

Published online by Cambridge University Press:  15 February 2011

R. Yen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge,Massachusetts 02138, USA
J. M. Liu
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge,Massachusetts 02138, USA
H. Kurz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge,Massachusetts 02138, USA
N. Bloembergen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge,Massachusetts 02138, USA
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Abstract

The changes in reflectivity of a silicon surface, irradiated by a green picosecond pulse, are probed during and following that pulse with a spatial resolution of 10μm. The data indicate the development of a liquid phase, and a resolidification either into a single crystal or an amorphous phase. The latter has a characteristic ring-type pattern, and occurs only at locations where the incident picosecond laser fluence lies between 0.2 and 0.26 J/cm2. The reflectivity data appear to be in good quantitative agreement with a “simple heating” model, in which the electrons and phonons maintain a local thermodynamic equilibrium on a picosecond time scale.

Type
Research Article
Copyright
Copyright © Materials Research Society 1982

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References

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