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Space Distribution of Deep Levels in SiGe/Si Heterostructure

Published online by Cambridge University Press:  22 February 2011

Zhang Rong ,
Yang Kai ,
Gu Shulin ,
Shi Yi ,
Huang Hongbin ,
Wang Ronghua ,
Han Ping ,
Hu Liqun ,
Zheng Youdou  and
Li Qi
Zhang Rong
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Yang Kai
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Gu Shulin
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Shi Yi
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Huang Hongbin
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Wang Ronghua
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Han Ping
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Hu Liqun
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Zheng Youdou
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
Li Qi
Affiliation:
Department of Physics, Nanjing University, Nanjing 210008, China
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Abstract

The small-pulse DLTS had been developed to measure distribution of deep levels in CVD grown SiGe/Si heterostructure before and after thermal processing at 800°C. Changes of defect states was found and after processing the original single deep level 0.62eV under the condition band split into two separated traps. A new weak deeper trap signal was found only in the just relaxed region. It could be Ge-related defect complex with misfit dislocations.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 325: Symposium L – Physics and Applications of Defects in Advanced Semiconductors , 1993 , 165
Copyright
Copyright © Materials Research Society 1994

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