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Space Charge Modelling in Solid Dielectrics under High Electric Field Based on Double Charge Injection Model

Published online by Cambridge University Press:  01 February 2011

George Chen  and
Su Han Loi
George Chen
Affiliation:
[email protected], University of Southampton, Electronics & Computer Science, University Road, Highfield, Southampton, Hampshire, SO17 1BJ, United Kingdom, +44 (0)2380 595166
Su Han Loi
Affiliation:
[email protected]
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Abstract

Present study aims to develop a clear insight on factors that influence space charge dynamics in solid dielectrics through a numerical simulation. The model used for the simulation is proposed by Alison and Hill [1] which describes charge dynamics as a result of bipolar transport with single level trapping. In this model, a constant mobility and no detrapping have been assumed. The simulation results show that carrier mobility, trapping coefficient and Schottky barrier have a significant effect on the space charge dynamics. Many features of space charge profiles observed by experiments have been revealed in despite of over simplistic model. More importantly, the simulation allows us to study the role of each individual parameter in the formation of space charge in solid dielectrics, so that the experimental results can be better understood.

Keywords

electrical propertiesdielectricpolymer
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 889: Symposium W – Electroresponsive Polymers and Their Applications , 2005 , 0889-W08-06
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

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