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Space Charge Memory Effect in a-Si:H at low Temperatures

Published online by Cambridge University Press:  15 February 2011

S. Heck ,
P. Stradins  and
H. Fritzsche
S. Heck
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL
P. Stradins
Affiliation:
James Franck Institute, University of Chicago, Chicago, IL
H. Fritzsche
Affiliation:
Tucson, AZ
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Abstract

Space charges build up near one or both electrodes of a photoconductor unless the thermoionic current balances the photocurrent. Space charges built up also when a voltage U is applied at low T to a semiconductor containing a non-equilibrium distribution of carriers. The presence of a space charge is observed as a relaxation-current transient when the sample is illuminated at zero bias. If one type of carrier is immobile the steady state photocurrent becomes zero.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 467: Symposium A – Amorphous and Microcrystalline Silicon Technology - 1997 , 1997 , 251
Copyright
Copyright © Materials Research Society 1997

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References

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