Hostname: page-component-586b7cd67f-l7hp2 Total loading time: 0 Render date: 2024-11-29T07:39:47.408Z Has data issue: false hasContentIssue false
  • English
  • Français

Space and Time Resolved Photoluminescence of Defects at Dislocations in In-Alloyed GaAs Substrate Material

Published online by Cambridge University Press:  26 February 2011

Matthew B. Johnson ,
A. T. Hunter  and
T. C. McGill
Matthew B. Johnson
Affiliation:
California Institute of Technology, Pasadena, CA 91125
A. T. Hunter
Affiliation:
Hughes Research Labs, Malibu, CA 90265
T. C. McGill
Affiliation:
California Institute of Technology, Pasadena, CA 91125
Get access

Abstract

We report a study of dislocations in In-alloyed GaAs substrate material using space and time resolved photoluminescence (PL). PL intensity maps show that an isolated dislocation cluster is in the center of a dark region with a 50μm radius surrounded by a bright region with an outer radius of 150μm. Lifetime measurements were made in the bright and dark regions. Values as long as 3.5 ns and as short as 250 psec were observed in adjacent bright and dark regions. These measurements indicate that the PL intensity contrast is explained by lifetime variations in these features. This supports the view that the dislocation cluster acts as a source and sink for defects which govern the lifetime in the surrounding material. Temperature dependence of the lifetime indicates two different defects may be involved. Both of these produce deep levels, neither one of which is EL2. A surface passivation technique is used to show that surface recombination is not important to the PL intensity contrast.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 415
Copyright
Copyright © Materials Research Society 1988

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Hunter, A.T., Kimura, H., Olsen, H.M., and Winston, H.V., J. Electron. Mat. 15, 215 (1986).Google Scholar
2.Hovel, H.J., Guidotti, D., IEEE Trans. Electron Devices ED–32, 2331 (1985).Google Scholar
3.Hyuga, F., Watanabe, K., Osaka, J., Hoshikawa, K., Appl. Phys. Lett. 23, 1742 (1986).Google Scholar
4.Leo, K., Rühle, W.W., and Haegel, N.M., J. Appl. Phys. 62, 3055 (1987).Google Scholar
5.Hunter, A.T., Diffusion and Defect Data 48, 1 (1986).Google Scholar
6.Yablonovitch, E, Sandroff, C.J., Bhat, R., and Gmitter, T., Appi. Phys. 51, 439 (1987).Google Scholar
7.Johnson, M.B., McGill, T.C., Hunter, A.T., and Marsh, O.J. (To be submitted)Google Scholar
8.Rosen, D., Doukas, A.G., Budansky, Y., Katz, A., and Alfano, R.R., Appl. Phys. Lett. 39, 935 (1981).Google Scholar
9.Johnson, M.B., McGill, T.C., Hunter, A.T., (J. Appl. Phys. to be published 1 Mar 1988)Google Scholar
10.Linde, D. von der, Kuhl, J., and Rosengart, E., J. Lumin. 24/25, 675 (1981).Google Scholar
11.Fork, R.L., Shank, C.V., Yen, R., Hirlimann, C.A., IEEE J. of Quantum Electron. QE–19, 500 (1983).Google Scholar
12.Blakemore, J.S., J. Appl. Phys. 53, R123 (1982).Google Scholar
13.Guidotti, D., Hasan, E., Hovel, H.J., Albert, M.,, Appl. Phys. Lett. 50, 912 (1987).Google Scholar
14. See any text on semiconductor physics such as, Sze, S.M.,Physica of Semiconductor Devices, 1st ed. (Wiley, New York, 1969), p.631.Google Scholar