Hostname: page-component-78c5997874-s2hrs Total loading time: 0 Render date: 2024-11-19T03:29:11.634Z Has data issue: false hasContentIssue false
  • English
  • Français

SOS Simulation of Sputtered Nanoripples

Published online by Cambridge University Press:  15 February 2011

Maria Stepanova  and
Steven K. Dew
Maria Stepanova
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, T6G 2V4, Canada
Steven K. Dew
Affiliation:
Department of Electrical and Computer Engineering, University of Alberta, Edmonton, Alberta, T6G 2V4, Canada
Get access

Abstract

We report a Monte-Carlo simulation of nanostructures that self-organize on surfaces under oblique ion bombardment. We have developed a quantitative solid-on-solid (SOS) model that describes the surface morphology during ion bombardment and performed the first systematic investigation for Cu bombarded by 1000 eV Ar+ ions at 0°–80° incidence. When the angle of ion incidence exceeds ∼40°, we observe 2–5 nm wide ripples aligned parallel to the ion beam plane in agreement with existing analytic theory. We also detect ripples directed perpendicularly to the ion beam plane, but the conditions under which they arise disagree with the theory. We have investigated the effect of surface relaxation on the morphologies and found two different regimes of ripple evolution depending on the efficiency of relaxation. After ∼100 nm are removed, secondary 10–50 nm wide patterns are formed provided that relaxation is sufficiently high. We compare our simulations with those from other authors and with experiments.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 777: Symposium A – Nanostructuring Materials with Energetic Beams , 2003 , T8.4
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Moon, D. W. and Kim, K.J., J. Vac. Sci. Technol. A14, 2744 (1996)Google Scholar
2. Rusiponi, S., Constantini, G., Mongeot, F. Buatier de, Bogarno, C., and Valbusa, U., Appl. Phys. Lett., 75, 3318 (1999)Google Scholar
3. Stepanova, M., Dew, S. K., and Soshnikov, I. P., Phys. Rev. B66, 125407 (2002)Google Scholar
4. Sigmund, P., J. Mater. Sci., 73, 1545 (1973)Google Scholar
5. Bradley, R.M. and Harper, J. M. E., J. Vac. Sci. Technol. A6, 2390 (1988)Google Scholar
6. Cuerno, R. and Barabási, A-L, Phys. Rev. Lett. 74, 4746 (1995)Google Scholar
7. Carter, G., Phys. Rev. B59, 1669 (1999)Google Scholar
8. Park, S., Kahng, B., Jeong, H., and Barabási, A-L, Phys. Rev. Lett, 83, 3486 (1999)Google Scholar
9. Stepanova, M. and Dew, S. K., J. Appl. Phys. 92, 1699 (2002)Google Scholar
10. Hartmann, A. K., Kree, R., Geyer, U., and Kölbel, M., Phys. Rev. B65, 193403 (2002)Google Scholar
11. Friedrich, L. J., Gardner, D. S., Dew, S. K., Brett, M. J., and Smy, T., J. Vac. Sci. Technol. B15, 1780 (1997).Google Scholar
12. Siegert, M. and Plischke, M., Phys. Rev. E66, 917 (1994)Google Scholar
13. Stepanova, M. and Dew, S. K. in Nanotech 2003 Proceedings, edited by Laudon, M. and Romanowicz, B., (Computational Publications, San Francisco, CA, USA, 2003) vol. 3, p. 211.Google Scholar