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Some new Results on Strontium Bismuth Tantalate Thin-Film Ferroelectric Memory Materials

Published online by Cambridge University Press:  10 February 2011

J. F. Scott
Affiliation:
Fac. Sci., University of New South Wales, Sydney 2052, Australia, [email protected]
A. J. Hartmann
Affiliation:
Fac. Sci., University of New South Wales, Sydney 2052, Australia, [email protected]
R. N. Lamb
Affiliation:
Fac. Sci., University of New South Wales, Sydney 2052, Australia, [email protected]
F. M. Ross
Affiliation:
Lawrence Berkeley Lab., University of California, Berkeley, CA, [email protected]
A. DE Vilbis
Affiliation:
Symetrix Corp., 5055 Mark Dabling Blvd., Colo. Springs, CO 80918, [email protected]
C. A. Paz De Araujo
Affiliation:
Symetrix Corp., 5055 Mark Dabling Blvd., Colo. Springs, CO 80918, [email protected]
M. C. Scott
Affiliation:
Symetrix Corp., 5055 Mark Dabling Blvd., Colo. Springs, CO 80918, [email protected]
G. Derbenwick
Affiliation:
Symetrix Corp., 5055 Mark Dabling Blvd., Colo. Springs, CO 80918, [email protected]
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Abstract

review is given, emphasizing electron microscopy, XPS, heavy-ion scattering, and very high frequency (1 MHz) hysteresis data, of the materials characteristics of thin films of SrBi2NbTaO9, SrBi2Ta2O9, and related titanates.

Type
Research Article
Copyright
Copyright © Materials Research Society 1996

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References

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