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Solution-Processed ZnO Nanowire Network Thin Film Transistors for Transparent Electronics

Published online by Cambridge University Press:  26 February 2011

Teymur Bakhishev ,
Steven Volkman  and
Vivek Subramanian
Teymur Bakhishev
Affiliation:
[email protected], University of California, Berkeley, Electrical Engineering and Computer Sciences, 144MB Cory Hall,, Berkeley, CA, 94720-1770, United States, (510) 643-4232
Steven Volkman
Affiliation:
[email protected], University of California, Berkeley, Electrical Engineering and Computer Sciences, United States
Vivek Subramanian
Affiliation:
[email protected], University of California, Berkeley, Electrical Engineering and Computer Sciences, United States
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Abstract

We describe a process to grow ZnO nanowires in aqueous solution of Hexamine and Zinc Nitrate to obtain a network of nanowires 0.5-1.5μm long. The growth was initiated on ZnO nanoparticles spun-cast onto thermal SiO2. We demonstrate bottom-gate FET structures formed using these nanowire networks as channel layers with gold (Au) and aluminum (Al) source/drain pads. Resulting transistors are well-behaved with on-off ratios >104 and mobility >10-2 cm2/V-s, calculated without accounting for actual surface coverage of nanowires. Actual nanowire mobility is therefore substantially higher, attesting to the potential for this technique as a method for realizing low-cost, high-brightness displays.

Keywords

devicessolution depositionsemiconducting
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 905: Symposium DD – Materials for Transparent Electronics , 2005 , 0905-DD05-05
Copyright
Copyright © Materials Research Society 2006

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