Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-29T06:14:50.263Z Has data issue: false hasContentIssue false
  • English
  • Français

Solution-Based Precursor Delivery for Copper CVD

Published online by Cambridge University Press:  01 February 2011

Lidong Wang  and
Gregory L. Griffin
Lidong Wang
Affiliation:
Department of Chemical Engineering, Louisiana State University Baton Rouge, LA 70803-7303
Gregory L. Griffin
Affiliation:
Department of Chemical Engineering, Louisiana State University Baton Rouge, LA 70803-7303
Get access

Abstract

We have measured growth rates and film properties for copper CVD using Cu(hfac)2 dissolved in isopropanol as the precursor delivery method. This approach offers the convenience and control associated with liquid precursor delivery, while avoiding the need to handle the precursor at its high melting point. The method provides similar growth rates to those observed using conventional delivery by solid sublimation, with the additional benefit that these growth rates are achieved using a much lower partial pressure of precursor in the reactor. The growth rate is nearly independent of the partial pressure of Cu(hfac)2, isopropanol, and H2 over the range of operating conditions examined. The film morphology and resistivity are also largely unaffected by the deposition conditions. These results strongly suggest that the mechanism proceeds via an adsorbed intermediate formed by the reaction of Cu(hfac)2 and isopropanol, and that the surface is nearly fully saturated by this intermediate.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 716: Symposium B – Silicon Materials-Processing, Characterization, and Reliability , 2002 , B11.12
Copyright
Copyright © Materials Research Society 2002

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Pilkington, R.D., Jones, P.A., Ahmed, W., Tomlinson, R.D., Hill, A.E., Smith, J.J., Nutall, R., J. de Phys. IV, Coll. C2, 1, 263–70 (1991).Google Scholar
2. Chiang, C.-M., Miller, T.M., Dubois, L.H., J. Phys. Chem. 97(45), 11781 (1993).Google Scholar
3. Cho, C.-C., U.S. Patent 5 087 485 (11 February 1992).Google Scholar
4. Borgharkar, N.S., Griffin, G.L., James, A., Maverick, A.W., Thin Solid Films, 320 86 (1998).Google Scholar
5. Borgharkar, N.S., Griffin, G.L., J. Electrochem. Soc., 146 1041 (1999).Google Scholar
6. Solanki, R., Pathangey, B., Electrochem. and Solid-State Lett., 3(10) 479 (2000).Google Scholar
7. Maverick, A.W., Fan, H., Bufaroosha, M.S., Cygan, Z.T., James, A.M., Fronczek, F.R., Griffin, G.L., Boey, J.Y., in Advanced Metallization Conference 1999, edited by Gross, M.E., Gessner, T., Kobayashi, N., Yasuda, Y., (Mater. Res. Soc., Pittsburgh, PA, 2000) pp201–205.Google Scholar
8. Borgharkar, N.S., Griffin, G.L., J. Electrochem. Soc., 145 347 (1998).Google Scholar