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Solution Processed Resistive Random Access Memory Devices for Transparent Solid-State Circuit Systems

Published online by Cambridge University Press:  27 February 2014

Yiran Wang ,
Bing Chen ,
Dong Liu ,
Bin Gao ,
Lifeng Liu ,
Xiaoyan Liu  and
Jinfeng Kang
Yiran Wang
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Bing Chen
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Dong Liu*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Bin Gao
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Lifeng Liu*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Xiaoyan Liu*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
Jinfeng Kang*
Affiliation:
Institute of Microelectronics, Peking University, Beijing 100871, China
*
*Email: [email protected]; [email protected];
*Email: [email protected]; [email protected];
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Abstract

A solution-processed method is developed to fabricate fully transparent resistive random access memory (RRAM) devices with a configuration of FTO/ZrO2/ITO, where the zirconium dioxide (ZrO2) layer was firstly deposited on fluorine tin oxide (FTO) substrate by sol-gel and then indium tin oxide (ITO) films were deposited on ZrO2 layer by sol-gel as the top electrodes.The solution processed FTO/ZrO2/ITO based RRAM devices show the fully transparency and excellent bipolar resistance switching behaviors. The resistance ratio between high and low resistance states was more than 10, and more than 100 switching cycles and good data retention and multilevel resistive switching have been demonstrated.

Keywords

oxidesol-gelmemory
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1633: Symposium R – Oxide Semiconductors , 2014 , pp. 105 - 110
Copyright
Copyright © Materials Research Society 2014 

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References

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