Hostname: page-component-669899f699-ggqkh Total loading time: 0 Render date: 2025-05-04T05:51:48.280Z Has data issue: false hasContentIssue false
  • English
  • Français

Solute Trapping at a Rapidly Moving Solid/Liquid Interface for a Lennard-Jones Alloy

Published online by Cambridge University Press:  25 February 2011

Stephen J. Cook  and
Paulette Clancy
Stephen J. Cook
Affiliation:
School of Chemical Engineering, Cornell University, Ithaca, NY 14853
Paulette Clancy
Affiliation:
School of Chemical Engineering, Cornell University, Ithaca, NY 14853
Get access

Abstract

Non-equilibrium Molecular Dynamics simulation methods have been used to study the trapping of “impurities” in an Ag5B15 Lennard-Jones alloy where the B atoms are 10% bigger in diameter than A. The observation of surface melting in this system is used to calculate an equilibrium interfacial segregation coefficient. Simulations of rapid melting and resolidification were performed for the (100) and (111) orientations at two different substrate temperatures (0.65 Tm and 0.95 Tm) for each orientation. Solute impurity atoms are shown to have been trapped at greater concentrations in the solid than under equilibrium conditions. Partitionless solidification is observed when the regrowth velocity greatly exceeds the diffusive velocity.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 157: Symposium A – Beam-Solid Interactions: Physical Phenomena , 1989 , 253
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1 White, C.W., Appleton, B.R. and Wilson, S.R., in Laser Annealing of Semiconductors, edited by Poate, J.M. and Mayer, J.W. (Academic Press, New York, 1982), pp. 111 – 146.Google Scholar
2 Baeri, P. and Campisano, S.U., in Laser Annealing of Semiconductors, edited by Poate, J.M. and Mayer, J.W. (Academic Press, New York, 1982), pp. 75 – 108.Google Scholar
3 Chokappa, D.K., Cook, SJ. and Clancy, P., Phys. Rev. B 22, 10075 (1989).Google Scholar
4 For example, Broughton, J.Q. and Gilmer, G.H., J. Chem. Phys. 79, 5095, 5105, 5119 (1983) and 84, 5741, 5749, 5759 (1986).Google Scholar
5 Thompson, M.O., Peercy, P.S., Tsao, J.Y. and Aziz, MJ., Appl. Phys. Lett. 49, 558 (1986).Google Scholar
6 Burke, E., Broughton, J.Q. and Gilmer, G.H., J. Chem. Phys. 89, 1030 (1988).Google Scholar
7 Aziz, M.J. and Kaplan, J., “Continuous growth model for interface motion during alloy solidification”, Acta. Metall., 36, 2335 (1988).Google Scholar