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A Soluble Polydiacetylene, P4BCMU, As a Negative Electron Beam Resist

Published online by Cambridge University Press:  25 February 2011

C. R. K. Marrian ,
R. J. Colton ,
A. Snow  and
C. J. Taylor
C. R. K. Marrian
Affiliation:
Naval Research Laboratory, Washington DC, 20375
R. J. Colton
Affiliation:
Naval Research Laboratory, Washington DC, 20375
A. Snow
Affiliation:
Naval Research Laboratory, Washington DC, 20375
C. J. Taylor
Affiliation:
Sachs Freeman, Landover, MD 20785
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Abstract

The polydiacetylene with urethane substituents, P4BCMU, has been investigated under e-beam irradiation. A thin, ∼ (100nm), coating can be applied to a silicon wafer by spin coating from a solution in chloroform. E-beam exposure of around 20μC/cm2 renders the polymer insoluble and resistant to a CF4 /O2 plasma etch and a RIE with freon 112. Features down to .2μm have been drawn and etched in this way. X-ray Photoelectron Spectroscopy indicates only a slight change in stoichiometry and suggests the irradiated polymer has tertiary amide characteristics. Fourier Transform Infra Red and Raman spectroscopies indicate that the unsaturated carbon bonds in the backbone of the polymer are not destroyed by e-beam irradiation. Rather the main changes occur in the N-H and the C=O (carbonyl) bonds of the urethane group.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 76: Symposium C – Science and Technology of Microfabrication , 1986 , 353
Copyright
Copyright © Materials Research Society 1987

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References

REFERENCES

1. Colton, R.J., C.R.K. Marrian & A. Snow to be publishedGoogle Scholar
2. Polydiacetylenes: Synthesis, Structure & Electronic Properties, edited by Bloor, D. & Chance, R.R. (Martinus Nyhoff Publishers, Dordrecht, W. Germany, 1985)Google Scholar
3. Baughman, R.H., Witt, J.D. & Yee, K.C., J. Chem. Phys. 60 4755 (1974).Google Scholar