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Solubility of Impurities and Defect Impurity Interaction In II-VI Semiconductors

Published online by Cambridge University Press:  21 February 2011

Y. Marfaing
Y. Marfaing*
Affiliation:
Laboratoire de Physique des Solides de Bellevue, C.N.R.S. - 92195 Meudon-Cedex, France
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Abstract

A description of incorporation and solubility limit of substitutional impurities is made using the alloy CdxHgloxTe as a model of analysis and a source of experimental data.

Then non-equilibrium incorporation of impurities under light excitation is considered. A model of photo assisted doping is presented which accounts for the high doping efficiency reported for the donor indium in photoassisted grown CdTe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 161: Symposium E – Properties of II-VI Semiconductors: Bulk Crystals, Epitaxial Films, Quantum Well Structures, and Dilute Magnetic Systems , 1989 , 69
Copyright
Copyright © Materials Research Society 1990

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References

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