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Solid-Phase Ohmic Contacts to GaAs with TiN Diffusion Barriers

Published online by Cambridge University Press:  26 February 2011

H. P. Kattelus ,
J. L. Tandon ,
A. H. Hamdi  and
M-A. Nicolet
H. P. Kattelus
Affiliation:
California Institute of Technology, Pasadena, California 91125 Permanent Address: Semiconductor Laboratory, Technical Research Centre of Finland, Otakaari 5A, SF-02150 Espoo 15, Finland
J. L. Tandon
Affiliation:
Applied Solar Energy Corporation, City of Industry, California 91749
A. H. Hamdi
Affiliation:
California Institute of Technology, Pasadena, California 91125
M-A. Nicolet
Affiliation:
California Institute of Technology, Pasadena, California 91125
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Abstract

We report on contacts to p-type GaAs formed by a GaAs/Pt/TiN/Ag system. Ohmic behavior in this system is believed to be accomplished by the solidstate reaction of Pt with GaAs. This reaction is confined by the TiN film which is thermally stable. In addition, the TiN film acts as an excellent diffusion barrier in preventing the intermixing of the top Ag layer with GaAs or Pt. Contacts formed with such controlled reaction have important implications for the stability of shallow p-n junction devices.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 37: Symposium D – Layered Structures, Epitaxy, and Interfaces , 1984 , 589
Copyright
Copyright © Materials Research Society 1985

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