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Solid Solubility of Sb and Te Implanted GaAs Following Solid Phase Annealing

Published online by Cambridge University Press:  22 February 2011

S.T. Johnson ,
K.G. Orrman-Rossiter  and
J.S. Williams
S.T. Johnson
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology Melbourne, Australia 3000.
K.G. Orrman-Rossiter
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology Melbourne, Australia 3000.
J.S. Williams
Affiliation:
Microelectronics Technology Centre, Royal Melbourne Institute of Technology Melbourne, Australia 3000.
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Abstract

High dose antimony and tellurium implanted (100) GaAs wafers have been annealed in the solid phase under various time/temperature conditions using a conventional furnace, a rapid incoherent light source and a continuous wave CW Argon ion laser. The samples were capped with RF sputtered SiO2 prior to annealing and analysed using 2MeV He++ ion channeling to determine the solid solubility of the implanted ions. Results indicate that the Te is more soluble than Sb; highest solubilities measured were 6 × 1020cm−3 for Te and 1.3 × 1020cm−3 for Sb.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 663
Copyright
Copyright © Materials Research Society 1984

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References

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