Hostname: page-component-78c5997874-4rdpn Total loading time: 0 Render date: 2024-11-17T18:22:22.647Z Has data issue: false hasContentIssue false
  • English
  • Français

Solid Phase Epitaxy Process Of Ar-Ion Bombarded Silicon Surfacesand Recovery of Crystallinity by Thermal Annealing Observed With ScanningTunneling Microscopy

Published online by Cambridge University Press:  15 February 2011

Katsuhiro Uesugi ,
Masamichi Yoshimura  and
Takafumi Yao
Katsuhiro Uesugi
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Masamichi Yoshimura
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Takafumi Yao
Affiliation:
Department of Electrical Engineering, Hiroshima University, Higashi-Hiroshima 724, Japan
Get access

Abstract

The solid-phase epitaxy (SPE) process of Ar+-ion bombarded Si(001) surfaces and recovery of crystallinity by thermal annealing arestudied “in situ” by using a scanning tunneling Microscope (STM).As-bombarded surfaces consist of grains of 0.63–1.6 nm in diameter. Thegrains gradually coalesce and form clusters of 2–3.6 nm in diameter atannealing temperature of 245° C (2×1) and (1×2) reconstructed regionssurrounded by amorphous regions are partially observed on the surface byprolonged annealing, which suggests the onset of SPE. Successive observationreveals that the smoothing of the surface occurs layer by layer. Asannealing temperature is raised up to 445 °C, the amorphous layerepitaxially crystallizes up to the topmost surface, and (2×1) reconstructedsurface with Monatomic-height steps is observed. The smoothing of thesurface structures and the formation of nucleation of Si islands areobserved during annealing at 500 °C.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 497
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1 Bean, J.C., Becker, G.E., Petroff, P.M. and Seidel, T.E., J. Appl. Phys. 48 (1977) 907.Google Scholar
2 Csepregi, L., Kennedy, E.F., Mayer, J.W. and Sigmon, T.W., J. Appl. Phys. 49 (1978) 3906.Google Scholar
3 Lau, S.S., Matteson, S., Mayer, J.W., Revesz, P., Gyulai, J., Roth, J., Sigmon, T.W. and Cass, T., Appl. Phys. Lett. 34 (1979) 76.Google Scholar
4 Sumitomo, K., Tanaka, K., Katayama, I., Shoji, F. and Oura, K., Surf. Sci. 242 (1991) 90.Google Scholar
5 Bock, W., Gnaser, H. and Oechsner, H., Surf. Sci. 282 (1993) 333.Google Scholar
6 Shigeta, T., Appl. Phys. Lett. 52 (1988) 619.Google Scholar
7 Uesugi, K., Yap, T., Sato, T., Sueyoshi, T. and Iwatsuki, M., Appl. Phys. Let. 62 (1993) 1600.Google Scholar
8 Hamers, R.J., Kohler, U.K. and Demuth, J.E., J. Vac. Sci. Technol. A 8 (1990) 195.Google Scholar