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Solid Phase Epitaxy of Strained Si1−xGex Alloys Formed by Highdose Ion Implantation into <001> Silicon

Published online by Cambridge University Press:  21 February 2011

D. J. Howard ,
D. C. Paine  and
N. G. Stoffel
D. J. Howard
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
D. C. Paine
Affiliation:
Division of Engineering, Brown University, Providence, RI 02912
N. G. Stoffel
Affiliation:
Belcore, Redbank, New Jersey 07701
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Abstract

In this paper we propose a new method for the synthesis of Si1−xGex strained-layer alloys using high-dose ion implantation of 74Ge at 200 keV into a preamorphized <001> Si wafer followed by solid phase epitaxy (SPE). Cross-sectional TEM was performed on samples at various stages of regrowth which revealed the evolution of the amorphous/crystalline interface and the development of strain relieving defects during SPE. We report that stacking faults are kinetically favored during SPE of Si1−xGex but are energetically feasible only above a critical strain energy. We propose a model that is based on the well known Matthews and Blakeslee approach which predicts the onset of stacking faults during SPE of high-dose ion implant-synthesized Si1−xGex/Si.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 279
Copyright
Copyright © Materials Research Society 1990

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