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SOLID PHASE EPITAXIAL GROWTH OF Ge ON GaAs

Published online by Cambridge University Press:  28 February 2011

C.J. Palmstrom ,
G.J. Galvin ,
S.A. Schwarz ,
B.C. De Cooman  and
J.W. Mayer
C.J. Palmstrom
Affiliation:
Bell Communications Research, Serin Physics Lab., Rutgers University, Box 849, Piscataway, N.J. 08854
G.J. Galvin
Affiliation:
Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, N.Y. 14853
S.A. Schwarz
Affiliation:
Bell Communications Research, 600 Mountain Avenue, Murray Hill, N.J. 07974
B.C. De Cooman
Affiliation:
Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, N.Y. 14853
J.W. Mayer
Affiliation:
Materials Science and Engineering, Bard Hall, Cornell University, Ithaca, N.Y. 14853
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Abstract

Solid phase epitaxial growth of electron beam evaporated Ge layers on unheated GaAs has been demonstrated. The amorphous Ge layers grow epitaxially on the GaAs surface during anneals at 400°C. A technique for growing these epitaxial layers without the need for in-situ heat treatment of the GaAs prior to Ge deposition is described.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 67
Copyright
Copyright © Materials Research Society 1986

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