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Sol Gel Derived Aluminum Nitride Thin Films Via the Nitridation of Alumina

Published online by Cambridge University Press:  25 February 2011

M.W. Russell  and
E.P. Giannelis
M.W. Russell
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
E.P. Giannelis
Affiliation:
Department of Materials Science and Engineering, Cornell University, Ithaca, NY 14853
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Abstract

Crystalline aluminum nitride thin films (∼ 1200 Å) were prepared via nitridation of amorphous aluminum oxide and characterized by XRD, SEM, TEM, oxygen resonance, Auger depth-profile analysis and ellipsometry. Precursor chemistry, heating rate, nitridation temperature and nitridation time were varied to explore the competition between densification, crystallization and nitridation. Oxygen content in the films decreased with increasing nitriding temperature or nitriding time. Heating rate was determined to have minimal effect on the oxygen content for the parameters evaluated. A modified Kissinger analysis of DTA data for the crystallization of α-Al2O3 yielded an effective activation energy of ∼104 kcal/mol.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 249: Symposium Q – Synthesis and Processing of Ceramics: Scientific Issues , 1991 , 207
Copyright
Copyright © Materials Research Society 1992

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References

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