Hostname: page-component-78c5997874-xbtfd Total loading time: 0 Render date: 2024-11-19T04:20:12.415Z Has data issue: false hasContentIssue false
  • English
  • Français

Soi Technologies at the CNET

Published online by Cambridge University Press:  22 February 2011

Soi group
Soi group*
Affiliation:
Centre National d'Etudes des Télécommunications, BP. 98, 38243, Meylan-Cedex, France
Get access

Abstract

For the recrystallization of poly-Si films deposited on oxidized Si wafers, we focus our research on lamp and cw laser systems. We have obtained large single-crystal films using both techniques. “Selective annealing” allows localization of the remaining defects in the recrystallized films. Crystallographic as well as electrical characterization confirm the device-worthy potential of this material.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 539
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1.Bensahel, D., Auvert, G., in “Laser-Solid Interactions and Transient Thermal Processing of Materials” edited by Narayan, J., Brown, W.L., Lemons, R.A. (North Holland, New York, 1983) pp. 165Google Scholar
2.Bomchil, G.,Herino, R.,Barla, K.,Pfister, J.C.,Perio, A., Ann. Chem. France,8,41, (1983)Google Scholar
3.Maserjian, J., Solid. Stat. Elect. 6, 477 (1981)Google Scholar
4Colinge, J.P., Demoulin, E.,Bensahel, D.,Auvert, G.,Appl. Phys. Lett. 41,346 (1982)Google Scholar
5.Haond, M.,Vu, D-P., Electron. Lett. 18, 727 (1982)Google Scholar
6.Cat, A., Gerzberg, L.,Gibbons, J.F.,Magee, T.J.,Peng, P.,Hong, J.D., Appl. Phys. Lett. 33,775 (1978)Google Scholar
7.Fan, J.C.C.,Geis, M.W.,Tsaur, B-Y.,Appl. Phys. Lett. 38,365 (1981)Google Scholar
8.Geis, M.W.,Smith, H.I.,Tsaur, B-Y.,Fan, J.C.C.,Silversmith, D.J., Mountain, R.W.,Chapman, R.L., in Ref. 1 pp. 477Google Scholar
9.Vu, D-P.,Haond, M.,Ternisien, T.D'Ouville, ,Perio, A.,Mingam, H., Electron. Lett. 19,4 (1983)Google Scholar
10.Kamgar, A.,Labate, E., Mat. Lett. 1, 91 (1982)Google Scholar
11.Lam, H.W.,Tasch, A.F. Jr.,Pinizzotto, R.F.,in “VLSI Electronics: Microstructure Science” Vol. 4 (Academic Press,1982),pp. 32–37Google Scholar
12.Stultz, T.J.,Gibbons, J.F.,Appl. Phys. Lett. 39,498 (1981)Google Scholar
13.Colinge, J.P.,de Wielde, F.,J. Appl. Phys. 52,4769 (1981)Google Scholar
14.Colinge, J.P.,Demoulin, E.,Lobet, M.,IEEE Trans. Electron. Dev. Ed–29,585 1982Google Scholar
15.Colinge, J.P.,Demoulin, E.,Bensahel, D.,Auvert, G., Eur. Mat. Res. Soc. Strasbourg(France),May 1983Google Scholar
16.Bensahel, D.,Haond, M.,Vu, D-P.,J.P. Colinge,Electron. Lett. 19,464 (1983)Google Scholar
17.Atwater, H.A. Jr.,Master of Sciences Thesis,Cambridge,Mass. Dept. Electr. Eng. Com. Science,Mass. Inst. Techn.,July 1983Google Scholar
18. SOI Group, unpublished resultsGoogle Scholar
19.Vu, D-P.,Haond, M.,Bensahel, D.,Dupuy, M.,J. Appl. Phys. 54, 437 (1983)Google Scholar
20.Haond, M.,Vu, D-P.,Bensahel, D.,Dupuy, M.,J. Appl. Phys. 54,3892 (1983)Google Scholar
21.Bezjian, K.A.,Smith, H.I.,Carter, J.M.,Geis, M.W., J. Electrochem. Soc. 129,1848 (1982)Google Scholar
22.Leamy, H.J.,Chang, C.C.,Baumgart, H.,Lemons, R.A.,Cheng, J., Mat. Lett. 40,488 (1982)Google Scholar
23.Hurle, D.T.J., in “Crystal Growth: an introduction”, (North Holland, 1973), pp. 240Google Scholar
24.Davis, J.R.,MacMahon, R.A.,Ahmed, H., in Ref. 1,pp. 563Google Scholar
25.Colinge, J.P.,Bensahel, D.,Alamome, M.,Haond, M.,Leguet, C., these proceedingsGoogle Scholar
26.Tsaur, B-Y.,Fan, J.C.C.,Geis, M.W.,Appl. Phys. Lett. 41, 83 (1983)Google Scholar
27.Tsaur, B-Y.,Fan, J.C.C., Chapman, R.L.,Geis, M.W., Silversmith, D.J.,Mountain, R.W.,IEEE,Electron. Dev. Lett. EDL–3, 398 (1982)Google Scholar
28.Colinge, J.P.,Morel, H.,Chante, J.P.,IEEE Trans. Electron. Dev. ED–3, 197 (1983)Google Scholar
29.Ng, K.K.,Celler, G.K.,Pavilonis, E.I.,Frye, R.C.,Leamy, H.J., Sze, S.M.,IEEE Electron. Dev. Lett. EDL–2, 361 (1981).Google Scholar