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Soft Vacuum, Pulsed Electron Beam Processing of Polyimides

Published online by Cambridge University Press:  26 February 2011

J. Krishnaswamy ,
L. Li ,
G. J. Collins ,
H. Hiraoka  and
Mary Ann Caolo
J. Krishnaswamy
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523,
L. Li
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523,
G. J. Collins
Affiliation:
Department of Electrical Engineering, Colorado State University, Fort Collins, CO 80523,
H. Hiraoka
Affiliation:
IBM Almaden Research Center,
Mary Ann Caolo
Affiliation:
Hewlett Packard, Fort Collins, CO 80526.
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Abstract

We report on the successful patterning of polyamic acid over wide areas using 28 kV pulsed electron beams produced in 30 mTorr air. The pattern degradation during the 350°C, 1/2 hr, imidizing thermal cure is prevented by pulsed, flood electron beam hardening of the developed polyamic acid patterns using the same soft vacuum, pulsed electron beam apparatus. It is also shown that a CW, low voltage, 1 to 3 kV electron beam sustained oxygen discharge can be used to completely strip the hardened, imidized material which is difficult to remove by wet methods. We also present, dose versus thickness remaining characteristics as a function of electron source to substrate distance and some examples of polyimide patterning.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 101: Symposium B – Laser and Particle-Beam Chemical Processing for Microelectronics , 1987 , 21
Copyright
Copyright © Materials Research Society 1998

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References

REFERENCES

1 Endo, Atsushi, Takada, Mitsuyuki, Adachi, Kohel, Takasago, Hayato, Yada, Toshio and Onishi:, Yoichiro J.Electrochem. Soc: Solid State Science and Technol. Vol.134, No.10, (1987).Google Scholar
2 Reche, John J.H., Semiconductor International, 116, September (1986).Google Scholar
3 Brannon, J.H., Lankard, J.R., Blaise, A. I., Burns, F. and Kaufman:, J. J. Appl. Phys. 58(5), 2036, (1985).Google Scholar
4 Krishnaswamy, J., Li, L., Collins, G.J., Hiraoka, H., and Caolo:, H.A. SPIE Vol. 773, Electron-Beam, X-ray and Ion Beam Lithographies VI, 159 (1987).Google Scholar
5 Hiraoka, H., Lee, J., Hinsberg, W., Krishnaswamy, J., Li, L., and Collins:, G.J. The 172nd Meeting of the Electrochemcial Society, Symposium on Patterning Science and Technology, Honolulu, Hawaii, Oct. 18–23, (1987).Google Scholar
6 Li, L., Hanwei, Y., Krishnaswamy, J., and Collins:, G.J. The 40th Gaseous Electronics Conference, Atlanta, Georgia, JB-10, Oct. 13–16, (1987).Google Scholar
7 Krishnaswamy, J., Li, L., Collins, G.J., Hiraoka, H., and Caolo:, M.A. The 172nd Meeting of the Electrochemical Society, Symposium on Patterning Science and Technology, Honolulu, Hawaii, Oct. 18–23, (1987).Google Scholar
8 Krishnaswamy, J., Li, L., Collins, G.J. and Hiraoka:, H. Materials Research Society Symposium Proceedings, Vol. 76, 91, (1987).Google Scholar