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Sn-H Complex in Hydrogen Pass Ivated GaAs

Published online by Cambridge University Press:  25 February 2011

D. M. Kozuch ,
Michael Stavola ,
S. J. Pearton ,
C. R. Abernathy  and
J. Lopata
D. M. Kozuch
Affiliation:
Department of Physics and Sherman Fairchild Center, Lehigh University, Bethlehem, Pennsylvania 18015
Michael Stavola
Affiliation:
Department of Physics and Sherman Fairchild Center, Lehigh University, Bethlehem, Pennsylvania 18015
S. J. Pearton
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
C. R. Abernathy
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
J. Lopata
Affiliation:
AT&T Bell Laboratories, Murray Hill, New Jersey 07974
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Abstract

It is confirmed that Sn donors in GaAs are passivated by exposure to a hydrogen plasma. The Sn-H complexes give rise to vibrational absorption bands at 1327.8 cm-1 and 967.7 cm-1 that are assigned to H-stretching and H-wagging modes respectively. A study of the thermal stability of the Sn-H complexes shows that they dissociate for annealing temperatures above ~150°C. The properties of the Sn-H complexes are compared to those of other donor-H complexes. Our results suggest a configuration for the complex with H at the antibonding site adjacent to the Sn.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 477
Copyright
Copyright © Materials Research Society 1990

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