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Smart Heterostructures Based on Solid Solution ZnCdHgTe

Published online by Cambridge University Press:  01 February 2011

Galina M. Khlyap ,
Petro G. Sydorchuk ,
Jacek Polit  and
Macej Oszwaldowsky
Galina M. Khlyap
Affiliation:
State Pedagogical University, 24 Franko str., Drohobych, 82100, Ukraine
Petro G. Sydorchuk
Affiliation:
State Pedagogical University, 24 Franko str., Drohobych, 82100, Ukraine
Jacek Polit
Affiliation:
Institute of Physics, University of Rzeszow, 35–310 Rzeszow, Rejtana 16A, Poland
Macej Oszwaldowsky
Affiliation:
Institute of Physics, Politechnika Poznanska, Piotrowo 3, 60–965, Poznan, Poland
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Abstract

Current – voltage (IVC) and capacitance – voltage (CVC) of heterostructures (Cd, Zn)Te/ZnCdHgTe are studied for the first time. Thin films ZnxCdyHg1-x-yTe were grown on monocrystalline (111) CdTe and ZnTe substrates by PLE technology. Deposition was carried out on substrates held at temperatures near 290 K. The thickness of investigated films was estimated to be about 5 μm. Electric characteristics of the as-grown structures were examined under T = 77–290 K in the wide range of applied bias. All investigated samples have demonstrated diode-like IVC and CVC under test signal frequency f = 1 kHz. Heterostructures CdTe/ZnCdHgTe have exhibited a room temperature photosensitivity in spectral range 0.50–0.65 μm.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 785: Symposium D – Materials and Devices for Smart Systems , 2003 , D10.10
Copyright
Copyright © Materials Research Society 2004

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References

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