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Slurry Retention and Transport during Chemical-Mechanical Polishing of Copper

Published online by Cambridge University Press:  18 March 2011

Anurag Jindal ,
Ying Li ,
Satish Narayanan  and
S. V. Babu
Anurag Jindal
Affiliation:
Departments of Chemical1 and Mechanical 2 Engineering Center For Advanced Materials Processing Clarkson University, Potsdam, NY 13699
Ying Li
Affiliation:
Departments of Chemical1 and Mechanical 2 Engineering Center For Advanced Materials Processing Clarkson University, Potsdam, NY 13699
Satish Narayanan
Affiliation:
Departments of Chemical1 and Mechanical 2 Engineering Center For Advanced Materials Processing Clarkson University, Potsdam, NY 13699
S. V. Babu
Affiliation:
Departments of Chemical1 and Mechanical 2 Engineering Center For Advanced Materials Processing Clarkson University, Potsdam, NY 13699
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Abstract

This work investigates the retention and transport of chemical species and abrasive particles during chemical-mechanical polishing (CMP) of copper (Cu). “Slurry step-flow” experiments, in which the concentrations of the chemicals and abrasives in the slurry are altered in steps during polishing were conducted with hydrogen peroxide (H2O2)/glycine based slurries. Two different pads, Suba-500 and IC 1400 (with k grooves), were compared in terms of their slurry retention and transport characteristics. With these experiments, it has been shown that both the abrasives and chemicals are constantly replaced during a typical CMP process. Better polishing performance of the IC 1400 over Suba 500 is a result of improved transport of the chemicals and the abrasives between the wafer/pad interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 671: Symposium M – Chemical-Mechanical Polishing 2001–Advances and Future Challenges , 2001 , M40.1
Copyright
Copyright © Materials Research Society 2001

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References

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