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Slipline Offset of In.25Ga.75As/GaAs (100) Imaged by Atomic Force Microscopy

Published online by Cambridge University Press:  15 February 2011

S.E. Harvey ,
J.E. Angelo  and
W.W. Gerberich
S.E. Harvey
Affiliation:
Department of Materials Science and Chemical Engineering, Minneapolis, MN 55455
J.E. Angelo
Affiliation:
Department of Materials Science and Chemical Engineering, Minneapolis, MN 55455
W.W. Gerberich
Affiliation:
Department of Materials Science and Chemical Engineering, Minneapolis, MN 55455
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Abstract

We have discovered a surface instability in In.25GaAs.75/GaAs (100) grown by molecular beam epitaxy (MBE) by direct comparison of atomic force microscopy (AFM), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) investigations. While slipline spacings measured by AFM correspond fairly well with those measured by TEM and SEM, the height displacement measured by AFM was seven times greater than that inferred from dislocations observed with TEM; the number of dislocations are insufficient to produce such dramatic heights. The difference in height measured by AFM with respect to the theoretical height calculated by strain relaxation and TEM dislocation number measurement can be attributed to a surface instability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 308: Symposium M1 – Thin Films: Stresses and Mechanical Properties IV , 1993 , 433
Copyright
Copyright © Materials Research Society 1993

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References

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