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Size-selective and High-yield Nanocrystal Growth of PbTe Compounds Using a Chemical Vapor Deposition Technique

Published online by Cambridge University Press:  01 February 2011

B. Zhang ,
Nicholas Gothard ,
Jian He ,
Daniel Thompson  and
Terry M. Tritt
B. Zhang
Affiliation:
[email protected], Clemson University, Physics and Astronomy, United States
Nicholas Gothard
Affiliation:
[email protected], Clemson University, Physics and Astronomy, United States
Jian He
Affiliation:
[email protected], Clemson University, Physics and Astronomy, United States
Daniel Thompson
Affiliation:
[email protected], Clemson University, Physics and Astronomy, United States
Terry M. Tritt
Affiliation:
[email protected], Clemson University, Physics and Astronomy, United States
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Abstract

The nanocrystals of PbTe and related compounds (Pb1−xSnxTe, PbTe1−xSex), differing by size and composition, have been synthesized using a chemical vapor transport (CVD) technique. The size–selective precipitation mechanism relying on the variation of heating temperatures, Ar flow rates and admixture with Au particles, enables a relatively good control of particle size distribution. In addition, the doping ratios of those nanocrystals are readily modified by changing the atomic ratio in the raw starting materials. Subsequently, a yield of hundreds of milligrams of nanocrystals which exhibit narrow size distributions at 100 nm, 300 nm and 600 nm and controllable composition have been obtained. XRD patterns taken on the PbTe samples show sharp, which indicate good crystallinity of samples. According to the shift of the Bragg reflections, the lattice constants of (Sn / Se) doped PbTe change with the variation of the doping ratios.

Keywords

thermoelectricitynanoscalechemical vapor deposition (CVD) (deposition)
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 886: Symposium F – Materials and Technologies fore Direct Thermal-to-Electric Energy Conversion , 2005 , 0886-F05-01
Copyright
Copyright © Materials Research Society 2006

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References

REFERENCES

[1] Nolas, G. S., Sharp, J. and Goldsmid, H. J., Thermoelectrics: Basic Principles and New Materials Development, Springer Verlag Publishing, Germany 2001.Google Scholar
[2] Rosi, F.D., Hocking, E.F, Lindenblad, N.E: RCA Rev. 22, 82(1961)Google Scholar
[3] Venkatasubramanian, R., Siivola, E., Colpitts, T., and O'Quinn, B., Nature, 413, 597 (2001).Google Scholar
[4] Harman, T.C., Taylor, P.J., Walsh, M.P. and LaForge, B.E., Science, 297, 2229(2002).Google Scholar
[5] Zhang, L., Yu, J., Mo, M., Wu, L., Kwong, K.W. and Li, Q., Small, 1, No. 3, 349 (2005).Google Scholar
[6] Zou, G., Liu, Z., Wang, D., Jiang, C. and Qian, Y., Eur. J. Inorg. Chem. 4521 (2004).Google Scholar
[7] Zhang, L., Yu, J., Mo, M., Wu, L., Kwong, K.W. and Li, Q., Small, 1, No. 3, 349 (2005).Google Scholar
[8] Harman, T.C., Taylor, P.J., Walsh, M.P. and LaForge, B.E., Science, 297, 2229(2002).Google Scholar
[9] Schroeer, D., Nininger, R. C., Phys. Rev. Lett. 1967, 19, 632.Google Scholar
[10] Nolas, G. S., Sharp, J. and Goldsmid, H. J., Thermoelectrics: Basic Principles and New Materials Development, Springer Verlag Publishing, Germany 2001.Google Scholar