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Size Control and Phonon Confinement of Silicon Nanowires Synthesized by Laser Ablation

Published online by Cambridge University Press:  01 February 2011

N. Fukata ,
T. Oshima ,
T. Tsurui ,
S. Ito  and
K. Murakami
N. Fukata
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba 305–8573, Japan Special Research Project on Nanoscience, University of Tsukuba, Tsukuba 305–8573, Japan
T. Oshima
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba 305–8573, Japan
T. Tsurui
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980–8577, Japan
S. Ito
Affiliation:
Institute for Materials Research, Tohoku University, Sendai 980–8577, Japan
K. Murakami
Affiliation:
Institute of Applied Physics, University of Tsukuba, Tsukuba 305–8573, Japan Special Research Project on Nanoscience, University of Tsukuba, Tsukuba 305–8573, Japan
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Abstract

Size control of silicon nanowires (SiNWs) synthesized by laser ablation of a Si target with nickel (Ni) as catalysts were investigated. The diameter of SiNWs decreased with decreasing synthesis temperature and content of Ni catalyst. Gradual down shift and asymmetric broadening of Si optical phonon peak depending on the diameter of SiNWs were observed for continuously, thermally oxidized SiNWs and SiNWs with smaller diameters formed at lower temperature. This can be interpreted by the phonon confinement effect. On the other hand, further thermal oxidation produced an upshift of the optical phonon peak. This is considered to be due to compressive stress since this stress was relieved by removing the surface oxide layers formed around the SiNW cores, resulting in a downshift of the optical phonon peak.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 832: Symposium F – Group IV Semiconductor Nanostructures , 2004 , F9.3
Copyright
Copyright © Materials Research Society 2005

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References

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