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Site-Selective Photoluminescence Excitation and Photoluminescence Spectroscopy of Er-Implanted Wurtzite GaN

Published online by Cambridge University Press:  10 February 2011

S. Kim ,
S. J. Rhee ,
D. A. Turnbull ,
X. Li ,
J. J. Coleman  and
S. G. Bishop
S. Kim
Affiliation:
Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. J. Rhee
Affiliation:
Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
D. A. Turnbull
Affiliation:
Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
X. Li
Affiliation:
Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
J. J. Coleman
Affiliation:
Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
S. G. Bishop
Affiliation:
Microelectronics Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801
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Abstract

Site-selective photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been carried out at 6K on the ∼1540 nm 4I15/2 → 4I15/2 emissions of Er3+ in Er-implanted GaN. The PLE spectra exhibit several broad, below-gap, defect- or impurity-related absorption bands which excite three distinct site-selective Er + PL spectra. The near-band edge spectral position and lineshape of the PLE spectrum of one of the site-selective PL bands suggest that this Er site forms a trap level within the band gap and an exciton bound at this trap is involved in the excitation mechanism. In addition, high resolution PLE spectra obtained with a tunable laser in the 810 nm spectral range reveal a set of sharp PLE peaks due to the 4I15/2 → 4I9/2 internal Er+ ƒ-band absorption superimposed on the broad defect PLE band. The site-selective PL spectrum excited by the sharp line ∼810 nm Er+ intra-ƒ shell PLE bands is characteristic of a fourth distinct Er+ site. The simple structure of the site-selective PL and PLE spectra associated with direct intra-ƒ shell absorption suggests that the optically active Er site responsible for these spectra is of high symmetry in wurtzite GaN and that it could be attributed to a single Er atom on a Ga site.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 468: Symposium D – Gallium Nitride and Related Materials II , 1997 , 131
Copyright
Copyright © Materials Research Society 1997

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References

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