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Site Occupation of Implanted Te in Gaas As a Function of Implantation Dose

Published online by Cambridge University Press:  26 February 2011

G. Langouche ,
D. Schroyen ,
H. Bemelmans ,
M. Van Rossum ,
W. Deraedt  and
M. de Potter
G. Langouche
Affiliation:
University of Leuven, Instituut voor Kern- en tralingsfysika, Celestijnenlaan 200 D, B-3030 Leuven, Belgium
D. Schroyen
Affiliation:
University of Leuven, Instituut voor Kern- en tralingsfysika, Celestijnenlaan 200 D, B-3030 Leuven, Belgium
H. Bemelmans
Affiliation:
University of Leuven, Instituut voor Kern- en tralingsfysika, Celestijnenlaan 200 D, B-3030 Leuven, Belgium
M. Van Rossum
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
W. Deraedt
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
M. de Potter
Affiliation:
IMEC, Kapeldreef 75, B-3030 Leuven, Belgium.
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Abstract

Te atoms were implanted in GaAs with doses ranging from 1013 to 1016 atoms/cm2, and annealed with the rapid thermal annealing technique. The samples were studied by Mössbauer Spectroscopy, Rutherford Backscattering Spectroscopy – Channeling, and the Van der Pauw-method. While at the lowest implantation dose an unperturbed substitutional site is observed at all annealing temperatures, at the highest implantation dose a strong deviation from a central position in an unperturbed configuration is observed at all temperatures. At the intermediate doses a high degree of substitutionality is observed between annealing temperatures of 200°C and 500°C only.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 104 , 1987 , 527
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

[1]Pearton, S.J., Poate, J.M., Sette, F., Gibson, J.M., Jacobson, D.C. and Williams, J.S., Nucl. Instr. Meth. B19/20, 369 (1987).Google Scholar
[2]Takai, M., Gamo, K., Masuda, K. and Namba, S., Jap. J. Appl. Phys. 12, 1926 (1973).Google Scholar
[3]Campisano, S.U., Foti, G., Baeri, F., Grimaldi, M.G. and Rimini, E., Appl. Phys. Lett. 37, 719 (1980).Google Scholar
[4]Sealy, B.J., Kular, S.S., Stephens, K.G., Sadana, D. and Booker, G.R., Rad. Eff. 48, 121 (1980).Google Scholar
[5]Pianetta, P., Amano, J., Woolhouse, G. and Stolte, C.A., in Laser and Electron-Beam Solid Interactions and Materials Processing, edited by Gibbons, J.F. (Elsevier, New York, 1981), p 239.Google Scholar
[6]Takai, M., Gamo, K., Masuda, K., Namba, S., Jap. J. Appl. Phys. 14, 1935 (1975).Google Scholar
[7]Bhattacharya, R.S., Rai, A.K., Yeo, Y.K., Pronko, P.P. and Park, Y.S., Nucl. Instr. Meth. 209/210, 637 (1983).Google Scholar
[8]Sette, F., Pearton, S.J., Poate, J.M. and Rowe, J.E., Phys. Rev. Lett. 56, 2637 (1986).Google Scholar
[9]Greaves, G.N., Halfpenny, P.J., Lamble, G.M. and Roberts, K.J., J. de Physique Colloque 47, C8, 901 (1986).Google Scholar
[10]Morgan, T.N., Phys. Rev. Lett. 58, 1280 (1987).Google Scholar
[11]Schroyen, D., Dezsi, I. and Langouche, G., Nucl. Instr. Meth. B15, 410 (1986).Google Scholar
[12]Schroyen, D., Hendrickx, P. and Langouche, G., Materials Science Forum, 10/12, 1177 (1986).Google Scholar
[13]Niesen, L., Boerma, D.O. and Oun, Z. Yi, Hyp. Int. 35, 729 (1987).Google Scholar
[14]Schroyen, D., PhD. Thesis, Leuven University 1987 (unpublished).Google Scholar
[15]Van Rossum, M., Langouche, G., Mishra, K.C. and Das, T.P., Phys. Rev. B 28, 6086 (1983).Google Scholar
[16]Kemerink, G.J., de Waard, H., Niesen, L. and Boerma, D.O., Hyp. Int. 14, 53, (1983).Google Scholar