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Sips adsorption model for DNA sensing with AlGaN/GaN high electron mobility transistors
Published online by Cambridge University Press: 13 February 2015
Abstract
This work presents an adsorption model based on the Sips isotherm for sensing different concentrations of DNA with open gate AlGaN/GaN high electron mobility field effect transistors (HEMTs). Probe-DNA was immobilized on the transistor gate before the application of target-DNA. Concentrations of 10-15 to 10-6 mol/L were tested. The sensor has a detection limit of 10-12 mol/L and saturates after the addition of 10-8 mol/L target-DNA.
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- MRS Online Proceedings Library (OPL) , Volume 1763: Symposium 2B – Materials for Biosensor Applications , 2015 , IMRC2014-S2B-O003
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- Copyright © Materials Research Society 2015
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