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Single Grain Si TFTs Fabricated at 100oC for Microelectronics on a Plastic Substrate

Published online by Cambridge University Press:  01 February 2011

Ming He ,
R. Ishihara ,
T. Chen ,
J.W. Metselaar  and
C.I.M. Beenakker
Ming He
Affiliation:
[email protected], Delft University of Technology, Delft Institute of Microelectronics and Submicrontechnology (DIMES), Feldmannweg 17, Delft, 2628CT, Netherlands
R. Ishihara
Affiliation:
[email protected], Delft University of Technology, Delft Institute of Microelectronics and Submicrontechnology (DIMES), Feldmannweg 17, Delft, 2628CT, Netherlands
T. Chen
Affiliation:
[email protected], Delft University of Technology, Delft Institute of Microelectronics and Submicrontechnology (DIMES), Feldmannweg 17, Delft, 2628CT, Netherlands
J.W. Metselaar
Affiliation:
[email protected], Delft University of Technology, Delft Institute of Microelectronics and Submicrontechnology (DIMES), Feldmannweg 17, Delft, 2628CT, Netherlands
C.I.M. Beenakker
Affiliation:
[email protected], Delft University of Technology, Delft Institute of Microelectronics and Submicrontechnology (DIMES), Feldmannweg 17, Delft, 2628CT, Netherlands
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Abstract

Single grain TFTs are fabricated at a maximum temperature of 100oC for macroelectronics on a plastic substrate, as Si channels are fabricated at 100oC by combination of excimer laser crystallization and sputtering. The gate oxide is formed at 80°C by inductively coupled plasma enhanced chemical vapor deposition. These TFTs have shown a smaller threshold swing of 0.49 V/dec. and a higher field-effect mobility of 290 cm2/V·s, which can be used to directly fabricate system circuits or a high quality display on a plastic substrate.

Keywords

polycrystallasermicroelectronics
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 989: Symposium A – Amorphous and Polycrystalline Thin-Film Silicon Science and Technology-2007 , 2007 , 0989-A09-05
Copyright
Copyright © Materials Research Society 2007

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References

1 Reuss, R.H., Chalamala, B.R., Moussessian, A., Kane, M.G., Kumar, A., Zhang, D.C., Rogers, J.A., Hatalis, M., Temple, D., Moddel, G., Eliasson, B. J., Estes, M. J., Kunze, J., Handy, E.S., Harmon, E.S., Salzman, D.B., Woodall, J.M., Alam, M.A., Murthy, J.Y., Jacobsen, S.C., Olivier, M., Markus, D., Campbell, P.M. and Snow, E., proc. of the IEEE, Vol. 93, 2005, 1239–1256.Google Scholar
2 Reuss, R.H., Hopper, D. G. and Park, J.-G., Mater Res Bull, Vol. 31, 2006, 447–450.Google Scholar
3 Ishihara, R., Hiroshima, Y., Abe, D., Dijk, B. D. van, Wilt, P. C. van der, Higashi, S., Inoue, S., Shimoda, T., Metselaar, J. W. and Beenakker, C. I. M., IEEE T Electr Dev, vol 51, 2004, 500–502.Google Scholar
4 Wilt, P. C. van der., Dijk, B. D. van, Bertens, G. J., Ishihara, R. and Beenakker, C. I. M., Appl. Phys. Lett., Vol. 79, 2001, 1819–1821.Google Scholar
5 Smith, P. M., Carey, P. G. and Sigmon, T. W., Appl. Phys. Lett., Vol. 70 1997, 342–344.Google Scholar
6 Gosain, D. P. and Noguchi, T. and Usui, S., Jpn. J. Appl. Phys., Vol. 39, 2000, L179–L181.Google Scholar
7 Burtsev, A., Apel, M. and Ishihara, R. and Beenakker, C. I. M., Thin Solid Film, Vol. 427, 2003, 309–313.Google Scholar
8 Im, J.S. and Kim, H.J., Appl. Phys. Lett., Vol. 64, 1994, 2303–2305.Google Scholar
9 Ishihara, R., Chen, T., He, M., Deosarran, D., Andel, Y., Metselaar, J.W. and Beenakker, C.I.M., Thin Solid Film, submitted.Google Scholar
10 Nicollian, E. H. and Brews, J. R., MOS (Metal Oxide Semiconductor) physics and technology, 1982, John Wiley & Sons. Google Scholar