Hostname: page-component-78c5997874-8bhkd Total loading time: 0 Render date: 2024-11-03T02:21:21.425Z Has data issue: false hasContentIssue false

Simultaneous Occurrence of Multiphases in the Interfacial Reactions of Ultrahigh Vacuum Deposited Ti, Hf and Cr Thin Films on (111)Si

Published online by Cambridge University Press:  21 February 2011

W.W. Hsieh
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
J.J. Lin
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
M.M. Wang
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
L.L. Chen
Affiliation:
Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, Republic of China
Get access

Abstract

Simultaneous occurrence of multiphases was observed in the interfacial reactions of ultrahigh vacuum deposited Ti, Hf and Cr thin films on (111)Si by high resolution transmission electron microscopy in conjunction with fast Fourier transform diffraction analysis and image simulation. For the three systems, an amorphous interlayer as well as a number of crystalline phase were found to form simultaneously in the early stages of interfacial reactions. The formation of multiphases appeared to be quite general in the initial stages of interfacial reactions of UHV deposited refractory thin films. The results called for a reexamination of generally accepted “difference” in reaction sequence between bulk and thin film couples.

Type
Research Article
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Tu, K.N. and Mayer, J.W., in Thin Films Interdiffusions and Reactions, edited by Poate, J.M., Tu, K.N., and Mayer, J.W. (Academic, New York, 1978), P. 329.Google Scholar
2 Nicolet, M.A. and Lau, S.S., in Materials and Process Characterization, edited by Einspruch, N.G. and Larrabee, G.R. (Academic, New York, 1983), P. 453.Google Scholar
3 Wang, M.H. and Chen, L.J., Appl. Phys. Lett. 59, 2460 (1991).CrossRefGoogle Scholar
4 Hsieh, W.Y., Lin, J.H., and Chen, L.J., Appl. Phys. Lett. 62, 1088 (1993).Google Scholar
5 Kilaas, R., Proceedings of 49th Annual Meeting of Electron Microscopy Society of America (San Francisco Press, San Francisco, CA, 1991) p. 528.Google Scholar
6 Wang, M.H. and Chen, L.J., Appl. Phys. Lett. 58, 463 (1991).Google Scholar
7 Cheng, J.Y. and Chen, L.J., J. Appl. Phys. 68, 4002 (1990).CrossRefGoogle Scholar
8 Lin, J.C. and Chang, Y.A., Mater. Res. Soc. Symp. Proc. 148, 3 (1989).CrossRefGoogle Scholar
9 Walser, R.W. and Bene, R.W., Appl. Phys. Lett. 28, 624 (1976).Google Scholar
10 Bene, R.W., J. Appl. Phys. 61, 1826 (1987).Google Scholar
11 Gosele, U. and Tu, K.N., J. Appl. Phys. 53, 3252 (1982).Google Scholar
12 Gosele, U. and Tu, K.N., J. Appl. Phys. 66, 2612 (1989).CrossRefGoogle Scholar