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Simultaneous Implant Activation and Isolation Formation in GaAs in a Single High-Temperature Anneal

Published online by Cambridge University Press:  26 February 2011

Kei-Yu Ko ,
S. Chen ,
G. Braunstein ,
L.-R. Zheng  and
S.-T. Lee
Kei-Yu Ko
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650–2011
S. Chen
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650–2011
G. Braunstein
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650–2011
L.-R. Zheng
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650–2011
S.-T. Lee
Affiliation:
Corporate Research Laboratories, Eastman Kodak Company, Rochester, NY 14650–2011
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Abstract

Using void-related compensation in Al-implanted GaAs, high-resistivity isolation regions that are thermally stable to high temperatures (> 700 °C) are demonstrated. The high-temperature thermal stability of the isolation regions allows the simplification of device processing in which a single high-temperature anneal (e.g., at 900 °C) can be used to activate the implant dopants in the device-active regions, and simultaneously to convert the Al-implanted regions highly resistive for electrical isolation. Other advantages of using void-related isolation will also be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 262: Symposium E – Defect Engineering in Semiconductor Growth, Processing and Device Technology , 1992 , 1085
Copyright
Copyright © Materials Research Society 1992

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References

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